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| RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes RHRU5040, RHRU5050 and RHRU5060 (TA49065) are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<45ns * Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . .600V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits Ordering Information PACKAGING AVAILABILITY PART NUMBER RHRU5040 RHRU5050 RHRU5060 PACKAGE TO-218 TO-218 TO-218 BRAND RHRU5040 RHRU5050 RHRU5060 * General Purpose Package JEDEC STYLE TO-218 ANODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified RHRU5040 RHRU5050 500 500 500 50 100 500 150 40 -65 to +175 RHRU5060 600 600 600 50 100 500 150 40 -65 to +175 UNITS V V V A A A W mj oC 400 400 400 50 100 500 150 40 -65 to +175 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . IF(AV) (TC = +93oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . TSTG, TJ 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 RHRU5040, RHRU5050, RHRU5060 Electrical Specifications TC = +25oC, Unless Otherwise Specified RHRU5040 MIN TYP 25 20 65 140 MAX 2.1 1.7 500 1.5 45 50 1.0 MIN RHRU5050 TYP 25 20 65 140 MAX 2.1 1.7 500 1.5 45 50 1.0 MIN RHRU5060 TYP 25 20 65 140 MAX 2.1 1.7 500 1.5 45 50 1.0 UNITS V V A A A mA mA mA ns ns ns ns nC pF oC/W SYMBOL VF TEST CONDITION IF = 50A, TC = +25oC IF = 50A, TC = +150oC IR VR = 400V, TC = +25oC VR = 500V, TC = +25oC VR = 600V, TC = +25oC IR VR = 400V, TC = +150oC VR = 500V, TC = +150oC VR = 600V, TC = +150oC tRR IF = 1A, dIF/dt = 100A/s IF = 50A, dIF/dt = 100A/s tA tB QRR CJ RJC DEFINITIONS IF = 50A, dIF/dt = 100A/s IF = 50A, dIF/dt = 100A/s IF = 50A, dIF/dt = 100A/s VR = 10V, IF = 0A VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 Q1 +V1 0 t2 t1 R2 +V3 Q2 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 LLOOP DUT Q4 0 0.25 IRM IRM C1 R4 -V4 VRM VR IF dIF dt tA tRR tB t3 0 -V2 R3 Q3 FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 2 RHRU5040, RHRU5050, RHRU5060 Typical Performance Curves 300 IR , REVERSE CURRENT (A) 3000 1000 IF, FORWARD CURRENT (A) 100 +100oC +175oC 10 +25oC +175oC 100 +100oC 10 1 +25oC 0.1 1 0.01 0 0.5 1.5 2 1 VF, FORWARD VOLTAGE (V) 2.5 3 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP TC = +25oC 60 50 t, RECOVERY TIMES (ns) FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE TC = +100oC 150 125 t, RECOVERY TIMES (ns) tRR 40 30 tA 20 tB 10 0 1 10 IF, FORWARD CURRENT (A) 50 tRR 100 75 tA 50 25 0 1 tB 10 IF, FORWARD CURRENT (A) 50 FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC 250 TC = +175oC FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC IF(AV) , AVERAGE FORWARD CURRENT (A) 50 t, RECOVERY TIMES (ns) 200 40 SQ. WAVE 30 DC tRR 150 100 tA 50 tB 20 10 0 1 10 IF, FORWARD CURRENT (A) 50 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES 3 RHRU5040, RHRU5050, RHRU5060 Typical Performance Curves 350 CJ , JUNCTION CAPACITANCE (pF) 300 250 200 150 100 50 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) (Continued) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L R + VDD 130 1M DUT VAVL 12V Q2 130 CURRENT SENSE VDD IL IV IL 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4 |
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